Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsSungjun IN, Sungchul KIM, Jaeho KIM
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Abstract
An image sensor includes a substrate having first and second surfaces, a first and second photoelectric conversion regions (PDs), a pixel device isolation layer between the first and second PDs, and first and second transmission gates that each include a respective first portion extending into the substrate from the substrate first surface and a respective second portion protruding from the substrate first surface. Each of the first and second transmission gates vertically overlaps the first PD, and a width of the second portion of the first transmission gate on the first surface in a first direction parallel to the first surface is greater than a width of the second portion of the second transmission gate on the first surface in the first direction.
Claims20
An image sensor, comprising:
- a substrate, the substrate including a first surface and a second surface, the second surface opposing the first surface;
- a first photoelectric conversion region (first PD);
- a second photoelectric conversion region (second PD);
- a pixel device isolation layer between the first PD and the second PD;
- and
- a first transmission gate and a second transmission gate, the first transmission gate including a first transmission gate first portion extending into the substrate from the first surface and a first transmission gate second portion protruding from the first surface, the second transmission gate including a second transmission gate first portion extending into the substrate from the first surface and a second transmission gate second portion protruding from the first surface,
- wherein each of the first transmission gate and the second transmission gate vertically overlaps the first PD, and
- wherein a width of the first transmission gate second portion on the first surface in a first direction parallel to the first surface is greater than a width of the second transmission gate second portion on the first surface in the first direction.
An image sensor, comprising:
- a substrate, the substrate including a first surface and a second surface, the second surface opposing the first surface;
- a first photoelectric conversion region (first PD);
- a second photoelectric conversion region (second PD);
- a pixel device isolation layer between the first PD and the second PD;
- a first transmission gate, the first transmission gate including a first transmission gate first portion extending into the substrate from the first surface and a first transmission gate second portion protruding from the first surface;
- and
- a second transmission gate,
- wherein each transmission gate of the first transmission gate and the second transmission gate vertically overlaps the first PD, and
- wherein a height of the first transmission gate in a thickness direction of the substrate is different from a height of the second transmission gate in the thickness direction.
An image sensor, comprising:
- a substrate, the substrate including a first surface and a second surface, the second surface opposing the first surface;
- and
- a pixel, the pixel including first to fourth sub-pixel regions arranged in a 2×2 matrix in plan view,
- wherein each sub-pixel region of the first to fourth sub-pixel regions includes
- a photoelectric conversion region (PD),
- a first transmission gate, the first transmission gate including a first transmission gate first portion extending into the substrate from the first surface and a first transmission gate second portion protruding from the first surface, and
- a second transmission gate, and
- wherein, in each respective sub-pixel region of the first to fourth sub-pixel regions,
- each transmission gate of the first transmission gate of the respective sub-pixel region and the second transmission gate of the respective sub-pixel region vertically overlaps the PD of the respective sub-pixel region, and
- a height of the first transmission gate of the respective sub-pixel region in a thickness direction of the substrate is different from a height of the second transmission gate of the respective sub-pixel region in the thickness direction.
Dependencies are inferred from the claim text.