Back contact solar cell and manufacturing method therefor

A method for manufacturing a back contact solar cell, comprising:

• providing a silicon substrate, wherein a back surface of the silicon substrate comprises:
• first regions and second regions alternately distributed at intervals, and
• interval regions located between the first regions and the second regions in a direction parallel to the silicon substrate,
• wherein in an arrangement direction of the first regions and the second regions, the interval regions comprise first interval sub-regions and second interval sub-regions, the first interval sub-regions are adjacent to the first regions;
• forming a first doped semiconductor layer on the first regions and the first interval sub-regions;
• forming recess structures that are concave toward an interior of the silicon substrate on the interval regions and the second regions, wherein an end of the first doped semiconductor layer adjacent to the interval regions is a suspended end, and bottoms of the recess structures are flat surfaces;
• depositing a second doped semiconductor layer on the first doped semiconductor layer and in the recess structures, and forming a first mask layer on part of the second doped semiconductor layer in the second region;
• selectively removing part of the second doped semiconductor layer on the first regions and the interval regions under a masking action of the first mask layer, and causing surfaces of the second interval sub-regions to be concave toward the interior of the silicon substrate relative to surfaces of the first interval sub-regions;
• removing the suspended end of the first doped semiconductor layer;
• removing the first mask layer;
• and
• forming a surface passivation layer covering the first doped semiconductor layer, the second doped semiconductor layer, and the interval regions.