Shielded deep trench capacitor structure and methods of forming the same

A semiconductor structure comprising a capacitor die, wherein the capacitor die comprises:

• a substrate comprising deep trenches extending downward from a front surface of the substrate toward a backside surface of the substrate;
• a trench capacitor structure comprising a layer stack including at least two metallic electrode layers interlaced with at least one node dielectric layer;
• a conductive metallic substrate enclosure structure laterally surrounding the deep trenches;
• a backside metal layer contacting a backside surface of the conductive metallic substrate enclosure structure;
• a metallic interconnect enclosure structure overlying the trench capacitor structure;
• and
• a metallic cap plate overlying and contacting the metallic interconnect enclosure structure and comprising openings therethrough,
• wherein the conductive metallic substrate enclosure structure, the backside metal layer, the metallic interconnect enclosure structure, and the metallic cap plate together form a conductive enclosure around the trench capacitor structure except at the openings through the metallic cap plate.

A method of forming a semiconductor structure, the method comprising:

• forming deep trenches in a substrate;
• forming a trench capacitor structure comprising a layer stack including at least two metallic electrode layers interlaced with at least one node dielectric layer in the deep trenches;
• forming a conductive metallic substrate enclosure structure laterally surrounding the deep trenches;
• forming a backside metal layer on a backside of the trench capacitor structure;
• forming a capacitor die by dicing an assembly comprising the backside metal layer and the substrate, wherein the capacitor die comprises the trench capacitor structure, a diced portion of the substrate, a diced portion of the backside metal layer, and the conductive metallic substrate enclosure structure;
• attaching the capacitor die to a semiconductor die including semiconductor devices therein;
• forming a dielectric matrix layer around the capacitor die and over the semiconductor die;
• and
• forming a redistribution interconnect assembly including redistribution metal interconnect structures formed within redistribution dielectric material layers over a combination of the capacitor die and the dielectric matrix layer.