Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy LIAW
Life of this patent
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Abstract
A semiconductor structure includes a transistor including channel layers vertically stacked from each other, a gate structure interfacing at least three surfaces of each of the channel layers, and a first source/drain feature and a second source/drain feature on opposite sides of the gate structure. The semiconductor structure further includes a first source/drain contact over and electrically connected to the first source/drain feature and a second source/drain contact under and electrically connected to the second source/drain feature. A bottom surface of the first source/drain contact is lower than a bottom surface of a topmost channel layer of the channel layers. A top surface of the second source/drain contact is higher than a top surface of a bottommost channel layer of the channel layers.
Claims20
A semiconductor structure, comprising:
- a transistor, comprising:
- channel layers vertically stacked from each other;
- a gate structure interfacing at least three surfaces of each of the channel layers;
- and
- a first source/drain feature and a second source/drain feature on opposite sides of the gate structure;
- a first source/drain contact over and electrically connected to the first source/drain feature, wherein a bottom surface of the first source/drain contact is lower than a bottom surface of a topmost channel layer of the channel layers;
- and
- a second source/drain contact under and electrically connected to the second source/drain feature, wherein a top surface of the second source/drain contact is higher than a top surface of a bottommost channel layer of the channel layers, wherein conductivity of the first source/drain contact and the second source/drain contact is greater than that of the first source/drain feature and the second source/drain feature;
- an inter-layer dielectric layer surrounding the first source/drain contact and the second source/drain contact.
A semiconductor structure, comprising:
- a first active area and a second active area extending in a first direction;
- an isolation feature between the first active area and the second active area in a second direction perpendicular to the first direction;
- a gate structure across the first active area and the second active area and interfacing a top surface of the isolation feature;
- source/drain features on opposite sides of the gate structure;
- a first source/drain contact electrically connected to a first one of the source/drain features, wherein the first source/drain contact comprises a first portion and a second portion under the first portion and surrounded by the first one of the source/drain features;
- and
- a second source/drain contact electrically connected to a second one of the source/drain features, wherein the second source/drain contact comprises a third portion and a fourth portion over the third portion and surrounded by the second one of the source/drain features.
A semiconductor structure, comprising:
- channel layers over a substrate;
- a gate structure interfacing at least three surfaces of each of the channel layers;
- gate spacers on opposite sides of the gate structure in a first direction;
- a first source/drain feature and a second source/drain feature attached to the channel layers;
- gate isolation features attached to the gate structure and gate spacers in a second direction perpendicular to the first direction, wherein bottom surfaces of the gate isolation features are lower than a bottom surface of the gate structure;
- a frontside source/drain contact over and electrically connected to the first source/drain feature;
- a first silicide layer between the frontside source/drain contact and the first source/drain feature, wherein a bottom surface of the first silicide layer is lower than a topmost channel layer of the channel layers;
- a backside source/drain contact under and electrically connected to the second source/drain feature;
- and
- a second silicide layer between the backside source/drain contact and the second source/drain feature, wherein a top surface of the second silicide layer is higher than a bottommost channel layer of the channel layers.
Dependencies are inferred from the claim text.