Semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTA-CHUAN LIAO, CHEN-LIANG CHU, HSIN-CHIH CHIANG, MING-TA LEI, TA-YUAN KUNG
Life of this patent
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Abstract
A semiconductor structure includes semiconductor structure includes a metal gate structure, a plurality of dielectric pillars disposed in the metal gate structure, a source/drain structure disposed at tow side of the metal gate structure, and at least a first connecting structure disposed over one of the dielectric pillars and coupled to the metal gate structure. The first connecting structure overlaps the one of the dielectric pillars entirely from a top view. An area of the first connecting structure is greater than an area of the one of the dielectric pillars from the top view.
Claims20
A semiconductor structure comprising:
- a metal gate structure;
- a plurality of dielectric pillars disposed in the metal gate structure;
- a source/drain structure disposed at two sides of the metal gate structure;
- and
- at least a first connecting structure disposed over one of the dielectric pillars and coupled to the metal gate structure,
- wherein the first connecting structure overlaps the one of the dielectric pillars entirely from a top view, and an area of the first connecting structure is greater than an area of the one of the dielectric pillars from the top view.
A semiconductor structure comprising:
- a metal gate structure;
- at least a conductive pillar disposed in the metal gate structure, wherein the conductive pillar is separated from the metal gate structure;
- a source/drain structure disposed at two sides of the metal gate structure;
- and
- at least a connecting structure disposed over the conductive pillar and coupled to the metal gate structure,
- wherein the connecting structure overlaps the conductive pillar entirely from a top view, and an area of the connecting structure is greater than an area of the conductive pillar from the top view.
A semiconductor structure comprising:
- a substrate;
- a dielectric layer disposed over the substrate;
- a metal gate structure disposed over the dielectric layer;
- a first dielectric pillar disposed in the metal gate structure;
- a source/drain structure disposed at two sides of the metal gate structure;
- and
- at least a connecting structure disposed over the first dielectric pillar and coupled to the metal gate structure,
- wherein a bottom of the first dielectric pillar is coupled to the dielectric layer.
Dependencies are inferred from the claim text.