US 2026/0304849 A1 · STRAIN ENGINEERING USING FIN ISOLATION STRUCTURES

Abstract

Techniques to form semiconductor devices that include one or more fin isolation structures. Different ones of the fin isolation structures are configured with diverse materials, relative to other ones of the fin isolation structures, such that they cause or otherwise impose beneficial stress (e.g., tensile or compressive) on the adjacent semiconductor devices to improve performance. The semiconductor regions of devices may be interrupted with a fin isolation structure that includes dielectric material to electrically isolate the portions of the semiconductor region on either side of the fin isolation structure. In an example, one or more first fin isolation structures are arranged between n-type transistor devices and include a dielectric material structure that imposes tensile stress on the n-type transistor devices, and one or more second fin isolation structures are arranged between p-type transistor devices and include a dielectric material structure that imposes compressive stress on the p-type transistor devices.

Claims20

Dependent claims

An integrated circuit comprising:

a first semiconductor region extending from a first source or drain region in a first direction;
a second semiconductor region extending from a second source or drain region in the first direction;
a first gate structure extending over the first semiconductor region in a second direction, and a second gate structure extending over the second semiconductor region in the second direction;
a first dielectric structure extending in the second direction adjacent to the first source or drain region, the first dielectric structure exerting a compressive stress on the first semiconductor region;
and
a second dielectric structure extending in the second direction adjacent to the second source or drain region, the second dielectric structure exerting a tensile stress on the second semiconductor region.

3 more elements

An electronic device, comprising:

a chip package comprising one or more dies, at least one of the one or more dies comprising
a first semiconductor device having a first semiconductor region extending from a first source or drain region to a second source or drain region in a first direction and a first gate structure extending over the first semiconductor region in a second direction substantially orthogonal to the first direction;
a second semiconductor device having a second semiconductor region extending from a third source or drain region to a fourth source or drain region in the first direction and a second gate structure extending over the second semiconductor region in the second direction;
a first dielectric structure adjacent to the first source or drain region, the first dielectric structure exerting a compressive stress on the first semiconductor region;
and
a second dielectric structure adjacent to the third source or drain region and colinearly aligned with the first dielectric structure, the second dielectric structure exerting a tensile stress on the second semiconductor region.

3 more elements

An integrated circuit comprising:

a first semiconductor region extending from a first source or drain region to a second source or drain region in a first direction;
a second semiconductor region extending from a third source or drain region to a fourth source or drain region in the first direction;
a first gate structure extending over the first semiconductor region in a second direction, and a second gate structure extending over the second semiconductor region in the second direction;
a first dielectric structure extending in the second direction adjacent to the first source or drain region;
a second dielectric structure extending in the second direction adjacent to the second source or drain region;
a third dielectric structure extending in the second direction adjacent to the third source or drain region;
and
a fourth dielectric structure extending in the second direction adjacent to the fourth source or drain region,
wherein the first and third dielectric structures have different material compositions and are colinear with one another, and the second and fourth dielectric structures have different material compositions and are colinear with one another.

6 more elements

Dependencies are inferred from the claim text.

Strain engineering using fin isolation structures

Life of this patent

Strain engineering using fin isolation structures

Life of this patent

Abstract

Claims20