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US 2026/0304801 A1Published application
Capacitor comprising anti-ferroelectric layers and high-k dielectric layers
AssigneeSK hynix Inc.
InventorSe Hun KANG
Life of this patent
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Abstract
A semiconductor device includes a first electrode, a second electrode, and a multi-layer stack positioned between the first electrode and the second electrode, the multi-layer stack including at least one anti-ferroelectric layer and at least one high-k dielectric layer.
Claims17
A semiconductor device comprising:
- a first electrode;
- a second electrode;
- and
- a multi-layer stack positioned between the first electrode and the second electrode, the multi-layer stack including at least two anti-ferroelectric layers and at least one high-k dielectric layer,
- wherein one anti-ferroelectric layer includes a hafnium zirconium oxide whose hafnium oxide content and zirconium oxide content are the same, and the hafnium zirconium oxide has a thickness which is thinner than approximately 50 Å.
2 more elements
A semiconductor device comprising:
- a first electrode;
- a second electrode;
- and
- a multi-layer stack positioned between the first electrode and the second electrode, the multi-layer stack including a first stack, a second stack and a high band gap layer positioned between the first stack and the second stack
- wherein the first stack and the second stack include a plurality of anti-ferroelectric layers and a plurality of high-k dielectric layers,
- wherein at least one anti-ferroelectric layer includes a hafnium zirconium oxide whose hafnium oxide content and zirconium oxide content are the same, and the hafnium zirconium oxide has a thickness which is thinner than approximately 50 Å.
3 more elements
Dependencies are inferred from the claim text.