Memory-only cubes and methods of forming the same

A method of manufacturing a semiconductor device, the method comprising:

• depositing a dielectric layer over a wafer of first semiconductor dies;
• singulating the first semiconductor dies;
• attaching a first semiconductor die of the first semiconductor dies to a carrier substrate;
• stacking one or more second semiconductor dies over the first semiconductor die to form a die stack;
• applying a gapfill material about the die stack;
• and
• debonding the semiconductor device from the carrier substrate.

A system-in-package (SiP) device, comprising:

• a host device;
• and
• a semiconductor device including:
• a stack of semiconductor dies including (i) a first semiconductor die and (ii) a second semiconductor die bonded to the first semiconductor die,
• a dielectric layer disposed on a side of the first semiconductor die opposite the second semiconductor die, wherein the SiP device lacks a bondline between the first semiconductor die and the dielectric layer,
• interconnect structures formed in the dielectric layer, and
• external contacts disposed at a side of the dielectric layer opposite the stack of semiconductor dies,
• wherein the interconnect structures couple the first semiconductor die to the external contacts, and
• wherein semiconductor dies of the stack are communicably coupled to the host device via one or more of the interconnect structures and one or more of the external contacts.