Semiconductor device and fabrication method thereof

A semiconductor device, comprising:

• bit lines extending along a first direction;
• isolation structures extending along the first direction;
• and
• a semiconductor layer extending in a plane perpendicular to the first direction, wherein:
• the bit lines are in contact with the semiconductor layer along the first direction;
• the bit lines and the isolation structures are arranged in a line extending along a second direction perpendicular to the first direction;
• the bit lines and the isolation structures alternate with one another along the second direction;
• and
• the bit lines and the isolation structures are isolated by a dielectric material along the second direction.

A method of forming a semiconductor device, comprising:

• forming a memory cell array comprising memory cells arranged in a first direction, a second direction, and a third direction, wherein the second direction is perpendicular to the first direction, and the third direction is perpendicular to the first direction and the second direction;
• forming bit lines extending along the first direction, wherein the bit lines comprise at least a first bit line;
• and
• forming conductive structures extending along the first direction, wherein the bit lines and the conductive structures are alternately arranged along the second direction, and wherein:
• the bit lines and the conductive structures are isolated by a dielectric material along the second direction;
• the first bit line is connected to at least one memory cell of the memory cell array;
• and
• the at least one memory cell comprises a semiconductor body and a storage structure arranged in the third direction.