Circuit structure and manufacturing method thereof
AssigneeSiliconware Precision Industries Co., Ltd.
InventorsPao-Hung TSENG, Yu-Cheng PAI, Hung-Kun CHEN, Yuan-Ping YEH
Life of this patent
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AssigneeSiliconware Precision Industries Co., Ltd.
InventorsPao-Hung TSENG, Yu-Cheng PAI, Hung-Kun CHEN, Yuan-Ping YEH
Estimating the term…
Provided are a circuit structure and a method of manufacturing the circuit structure. A first circuit layer and first conductive blind vias are formed on a first dielectric material. Conductive bumps are formed on the first conductive blind vias. Then, a second dielectric material is formed on the first circuit layer, and a second circuit layer and second conductive blind vias are formed on the second dielectric material. The second conductive blind vias are stacked on the first conductive blind vias, and the conductive bumps are formed at junctions between the first conductive blind vias and the second conductive blind vias to increase the contact area between the first conductive blind vias and the second conductive blind vias.
A circuit structure, comprising:
A method of manufacturing a circuit structure, comprising:
Dependencies are inferred from the claim text.