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US 2026/0304616 A1Published application
Conductive substrate and manufacturing method thereof
AssigneeDeepWave, Inc.
InventorsDae-kyu CHOI, Kuk Hwan LEE
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Abstract
A silicon-based conductive substrate according to the present disclosure includes an undoped or regionally non-uniformly doped silicon substrate, an insulating layer located on the silicon substrate, and a metal pattern located on the insulating layer.
Claims19
A silicon-based conductive substrate comprising:
- an undoped or regionally non-uniformly doped silicon substrate;
- an insulating layer located on the silicon substrate;
- and
- a metal pattern located on the insulating layer.
1 more element
A manufacturing method of a conductive substrate, comprising:
- preparing an undoped or regionally non-uniformly doped silicon substrate;
- placing an insulating layer on the silicon substrate;
- and
- placing a metal pattern on the insulating layer.
1 more element
Dependencies are inferred from the claim text.