Image sensing device and imaging device including the same

An image sensing device comprising:

• a first pixel configured to detect light and arranged in a first row;
• and
• a second pixel configured to detect light and arranged in a second row adjacent to the first row;
• a connection node configured to be electrically connected to the first pixel and the second pixel,
• wherein the first pixel includes:
• at least one first photodetector that converts light into photocharge;
• a first floating diffusion region configured to receive the photocharge from the at least one first photodetector;
• and a first dual conversion gain (DCG) transistor coupled between the first floating diffusion region and the connection node and configured to turn off in a first mode and turn on in a second mode, and
• wherein the second pixel includes:
• at least one second photodetector that converts light into photocharge;
• a second floating diffusion region configured to receive the photocharge from the at least one first photodetector or the at least one second photodetector;
• and a second DCG transistor coupled between the connection node and the second floating diffusion region and configured to turn on in both the first mode and the second mode.

An imaging device comprising:

• an image sensing device configured to generate image data by sensing incident light;
• and
• an image signal processor configured to perform image signal processing on the image data,
• wherein the image sensing device includes:
• a first pixel for sensing the incident light;
• a second pixel for sensing the incident light and arranged adjacent to the first pixel, and a connection node, wherein the first and second pixels share the connection node;
• and a line capacitor coupled to the connection node and configured to store a voltage of the connection node,
• wherein the first pixel includes:
• at least one first photodetector that converts received light into photocharge;
• a first floating diffusion region configured to receive the photocharge from the at least one first photodetector;
• and a first dual conversion gain (DCG) transistor coupled between the first floating diffusion region and the connection node, and
• the second pixel includes:
• at least one second photodetector that converts received light into photocharge;
• a second floating diffusion region configured to receive the photocharge from the at least one first photodetector of the first pixel through the line capacitor;
• and a second DCG transistor coupled between the connection node and the second floating diffusion region.