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US 2026/0302151 A1Published application
Sample support and method for manufacturing sample support
AssigneeHamamatsu Photonics K.K.
InventorTakamasa IKEDA
Life of this patent
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Abstract
A sample support is a sample support for ionizing a sample. The sample support includes a substrate having a first surface, a second surface opposite to the first surface, and an irregular porous structure opening to at least the first surface. The porous structure is formed of a plurality of large particles connected to each other and a plurality of small particles having a diameter smaller than that of the large particles. At least a part of the plurality of small particles is held between two or more of the large particles constituting the first surface.
Claims10
1:
- A sample support for ionizing a sample, comprising:
- a substrate having a first surface, a second surface opposite to the first surface, and an irregular porous structure opening to at least the first surface,
- wherein the porous structure is formed of a plurality of first particles connected to each other and a plurality of second particles having a diameter smaller than that of the first particles, and
- at least a part of the plurality of second particles is held between two or more of the first particles constituting the first surface.
1 more element
2:
- The sample support according to claim 1, wherein the second particles are formed of a same material as the first particles.
3:
- The sample support according to claim 2, wherein the first particles and the second particles are formed of an insulating material.
4:
- The sample support according to claim 3, wherein the insulating material is glass.
5:
- The sample support according to claim 1, wherein
- when the first surface is viewed from a position facing the first surface along a direction in which the first surface and the second surface face each other, the following formula (1) is satisfied, where R1 is an average particle size of the first particles included in a unit area of a predetermined size, and R2 is an average particle size of the second particles included in the unit area:
- R
-
- 1
-
- ×
- 1
- /
- 1
-
- 0
-
- 0
- ≤
- R
-
- 2
- ≤
- R
-
- 1
- ×
- 1
- /
- 2
- .
- (
- 1
- )
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6:
- The sample support according to claim 1, wherein the substrate comprises:
- a first layer including the first surface, in which a plurality of the first particles and a plurality of the second particles coexist;
- and
- a second layer located closer to the second surface than the first layer, consisting of a plurality of the first particles, and not including the second particles.
1 more element
7:
- The sample support according to claim 6, wherein a thickness of the first layer in a first direction in which the first surface and the second surface face each other is one-fifth or less of a thickness of the second layer in the first direction.
8:
- The sample support according to claim 6, wherein
- the substrate further comprises a third layer including the second surface, in which a plurality of the first particles and a plurality of the second particles coexist,
- the second layer is located between the first layer and the third layer, and
- at least a part of the plurality of second particles included in the third layer is held between two or more of the first particles constituting the second surface.
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9:
- The sample support according to claim 1, further comprising a conductive layer that covers the first surface along an uneven shape of the first surface configured by the first particles and the second particles, without blocking openings of the porous structure on the first surface.
10:
- A method for manufacturing the sample support according to claim 1, comprising:
- a first sintering step of sintering the plurality of first particles to obtain a sintered body having substantially same outer shape as the substrate;
- an adding step of adding the plurality of second particles to a surface of the sintered body corresponding to the first surface;
- and
- a second sintering step of sintering the sintered body and the plurality of second particles obtained by the adding step to obtain the porous structure.
2 more elements