Plasma processing apparatus

A plasma processing apparatus comprising:

• a vacuum chamber having a film formation space;
• a sputtering cathode including
• a target disposed in the vacuum chamber and having a sputtering surface, and
• a plurality of magnet units located on a side of the target opposite to the sputtering surface;
• a substrate support part disposed to face the target in the vacuum chamber and configured to support a substrate;
• a plasma generation power supply configured to supply electric power to the sputtering cathode and to generate plasma in the vacuum chamber;
• a gas-atmosphere setting part configured to set a gas atmosphere in the film formation space by supplying gas into the vacuum chamber and discharging the gas from the vacuum chamber;
• and
• a magnetic-field generation power supply configured to supply electric power to the plurality of magnet units and to generate a magnetic field in each of the plurality of magnet units, wherein
• the plurality of magnet units are disposed in the film formation space facing the sputtering surface so as to generate a leakage magnetic field obtained by superimposing a plurality of magnetic fields generated by the plurality of magnet units, and
• the plurality of magnet units are configured to change the leakage magnetic field, in a direction parallel to a center axis passing through a center of the sputtering surface and extending in a thickness direction of the target, in a radial direction with respect to the center of the sputtering surface, and in a circumferential direction of the sputtering surface around the center axis.