Charged particle beam device and control method therefor

A control method of a charged particle beam device, the charged particle beam device including

• a sample holder that holds a sample,
• an ion source that emits a focused ion beam with which the sample is irradiated,
• a secondary electron detection unit that detects secondary electrons emitted from the sample by irradiation with the focused ion beam, and
• a control unit that generates an observation image of the sample based on a detection signal output from the secondary electron detection unit and controls each unit,
• the control method comprising setting an tilt angle by inputting an amount of shape change when the sample is subjected to test milling using the focused ion beam and a target shape after milling of the sample to a training model generated by performing machine training in advance on a relationship between a milling condition including the tilt angle of a milled surface of the sample with respect to a central axis of the focused ion beam and a milling result including flatness of the milled surface.

A charged particle beam device comprising:

• a sample holder that holds a sample;
• an ion source that emits a focused ion beam with which the sample is irradiated;
• a secondary electron detection unit that detects secondary electrons emitted from the sample by irradiation with the focused ion beam;
• an electron source that emits an electron beam with which the sample is irradiated;
• a backscattered electron detection unit that detects backscattered electrons emitted from the sample by irradiation with the electron beam;
• and
• a control unit that generates an observation image of the sample based on a detection signal output from the secondary electron detection unit or the backscattered electron detection unit and controls each unit,
• wherein the control unit generates a training model by performing machine training on a relationship between a milling condition including an tilt angle of a milled surface of the sample with respect to a central axis of the focused ion beam and a milling result including flatness of the milled surface calculated based on a detection signal output from the backscattered electron detection unit.