Method and apparatus for continuous chained energy ion implantation

An ion implantation system comprising:

• an ion source configured to ionize a dopant material and generate an ion beam;
• an acceleration/deceleration stage configured to receive the ion beam, wherein the acceleration/deceleration stage is configured to selectively vary an energy of the ion beam based on one or more inputs to the acceleration/deceleration stage, thereby defining a plurality of discrete energies of the ion beam;
• an end station positioned downstream of the acceleration/deceleration stage, wherein the end station comprises a workpiece support configured to selectively position a workpiece before the ion beam for ion implantation thereby;
• and
• a controller configured to control the one or more inputs to the acceleration/deceleration stage to sequentially and uniformly expose an entirety of the workpiece to each of the plurality of discrete energies of the ion beam, wherein the workpiece is maintained on the workpiece support within the end station concurrent with the selective variation of the energy of the ion beam.

An ion implantation system comprising:

• an ion source configured to ionize a dopant material and generate an ion beam;
• an acceleration/deceleration stage configured to receive the ion beam, wherein the acceleration/deceleration stage is configured to selectively vary an energy of the ion beam based on one or more inputs to the acceleration/deceleration stage, thereby defining a plurality of discrete energies of the ion beam;
• an end station positioned downstream of the acceleration/deceleration stage, wherein end station comprises a workpiece support configured to selectively position a workpiece before the ion beam for ion implantation thereby;
• and
• a controller configured to control the one or more inputs to the acceleration/deceleration stage to sequentially and uniformly expose an entirety of the workpiece to each of the plurality of discrete energies of the ion beam, wherein the workpiece is maintained within the end station concurrent with the selective variation of the energy of the ion beam, and wherein each of the plurality of discrete energies is associated with each of a plurality of process recipes, respectively, wherein the controller is further configured to implant the entirety of the workpiece with ions according to each of the plurality of respective process recipes.