Read method of memory device and memory device therefore

A memory device, comprising:

• a memory array, comprising a memory block, wherein the memory block comprises at least one memory cell string, wherein the at least one memory cell string comprises a plurality of memory cells, the plurality of memory cells are divided into a plurality of pages, the plurality of pages correspond to a plurality of word lines;
• a memory controller, controlling the memory array;
• and
• an error correction code (ECC) circuit, coupled to the memory controller to perform an error correction operation,
• wherein the memory controller is configured to perform:
• performing a neighboring data repairing operation while an error correction operation performed according to first data of a first page is failed,
• wherein the neighboring data repairing operation comprises:
• performing a first read operation on a first word line to obtain a first threshold voltage state of the first page, wherein the first page corresponds to the first word line;
• performing a second read operation on at least one second word line to obtain at least one second threshold voltage state of at least one second page, wherein the at least one second page corresponds to at the least one second word line, and the at least one second page is adjacent to the first page;
• and
• correcting the first data corresponding to the first page according to the first threshold voltage state of the first page and the at least one second threshold voltage state of the at least one second page.