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US 2026/0301784 A1Published application
Sense amplifying circuit and memory device including the same
AssigneeSK hynix Inc.
InventorJu Hyun PARK
Life of this patent
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Abstract
A sense amplifying circuit includes a replica circuit including one or more active resistors coupled in series between a ground voltage node and a first node; a current control circuit configured to supply a keeper current to a sensing node coupled to at least one memory cell when a sensing enable signal is activated, and to control an amount of the keeper current based on a voltage level of the first node; and a sensing circuit configured to sense and output a voltage at the sensing node.
Claims16
A sense amplifying circuit comprising:
- a replica circuit including one or more active resistors coupled in series between a ground voltage node and a first node;
- a current control circuit configured to supply a keeper current to a sensing node coupled to at least one memory cell when a sensing enable signal is activated, and to control an amount of the keeper current based on a voltage level of the first node;
- and
- a sensing circuit configured to sense and output a voltage at the sensing node.
1 more element
A memory device comprising:
- a memory cell array having a plurality of memory cells arranged between a plurality of word lines and a plurality of bit lines;
- a column control circuit configured to select one of the plurality of bit lines based on a column address and connect the selected bit line to a sensing node;
- and
- a sense amplifying circuit including one or more active resistors, which are coupled in series between a ground voltage node and a first node and configured to simulate characteristics of the memory cells, output read data by sensing a voltage at the sensing node and control an amount of a keeper current supplied to the sensing node based on a voltage level of the first node.
1 more element
Dependencies are inferred from the claim text.