Coordinated motion metrology with polar rose scanning

A method for a polar rose coordinated motion bright-field camera and dark-field camera-scanning metrology, comprising the steps of:

• locating a Si wafer on a metrology chuck;
• rotating said Si wafer on said metrology chuck and positioning a metrology stage over said Si wafer to position said Si wafer in a scan start reference position;
• assigning said scan start reference position a positional coordinate in a main computer as X Y C (0, 0, 0);
• performing bright field camera and a dark field camera metrology scan while coordinating the motions of a modulator wheel rotation in an A axis, said metrology stage in a scan axis, and the shuttering of said bright field camera and said dark field camera to acquire polar rose patterned scan images;
• processing said acquired polar rose patterned scan images, algorithmically linking said polar rose patterned scan images to positional coordinates to develop a three-dimensional topographical map of said Si wafer.

A method for a polar rose coordinated motion bright-field camera and dark-field camera-scanning metrology, comprising the steps of:

• locating a Si wafer on a metrology chuck;
• rotating said Si wafer with said metrology chuck on a moveable stage, and positioning a metrology stage over said Si wafer to position said Si wafer in a scan start reference position;
• assigning said scan start reference position a positional coordinate;
• synchronizing coordinated motions of a modulator and said metrology stage with a shuttering of said bright field camera and a shuttering of said dark field camera;
• performing a polar rose patterned metrology scan using both a bright-field camera and a dark-field camera
• processing bright field camera and dark field camera acquired images from polar rose scan algorithmically linking said acquired images to positional coordinates to develop a three-dimensional topographical map of said Si wafer.

A method for a polar rose coordinated motion bright-field camera and dark-field camera-scanning metrology, comprising the steps of:

• locating a Si wafer on a chuck of X-Y stage;
• rotating said Si wafer on said metrology chuck and positioning said bright field camera and said dark field camera above said Si wafer to position said Si wafer in a scan start reference position;
• assigning said Si wafer a scan start reference position with an X,Y,Z positional coordinate;
• performing a polar rose patterned metrology scan using said bright-field camera and said dark-field camera;
• and
• wherein a shuttering of said bright-field camera and said dark-field camera acquires complementary image data from said polar rose patterned metrology scan while operating in synchronized motion coordination with a modulator and said X-Y stage;
• processing acquired said complementary image data and algorithmically linking said scan images to said positional coordinates to develop a three-dimensional topographical map of said Si wafer.

A method for a polar rose coordinated motion bright-field camera and dark-field camera-scanning metrology, comprising the steps of:

• locating a Si wafer on a chuck of X-Y stage;
• rotating said Si wafer on said metrology chuck and positioning said bright field camera and said dark field camera above said Si wafer to position said Si wafer in a scan start reference position;
• assigning said Si wafer a scan start reference position with an X,Y,Z positional coordinate;
• performing a polar rose patterned metrology scan using said bright-field camera and said dark-field camera wherein the all positions of a top surface of said Si wafer are directly scanned;
• and
• wherein a shuttering of said bright-field camera and said dark-field camera acquires complementary image data from said polar rose patterned metrology scan while operating in synchronized motion coordination with a modulator and said X-Y stage;
• processing acquired said complementary image data and algorithmically linking said scan images to said positional coordinates to develop a three-dimensional topographical map of said Si wafer.