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US 2026/0299406 A1Published application
Photoresist compositions and patterning methods
OwnerDeyan Wang, Wenxu Zhang +5inventors
InventorsDeyan Wang, Wenxu Zhang, Adam Z. Peng, Zhebin Zhang, Gregory Cleveland, Greg A. Hostetler, Rachel Snyder
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Abstract
A photoresist composition, comprising an organic metal oxide oligomer comprising a M-O-M bond, wherein M comprises a metal; a crosslinker comprising a photocleavable group, wherein the crosslinker is structurally different from the organic metal oxide oligomer; and a solvent, wherein the solvent is present in the composition in an amount greater than 50 weight (wt %), based on total weight of the composition.
Claims17
A photoresist composition, comprising:
- an organic metal oxide oligomer comprising a M-O-M bond, wherein M comprises a metal;
- a crosslinker comprising a photocleavable group, wherein the crosslinker is structurally different from the organic metal oxide oligomer;
- and
- a solvent,
- wherein the solvent is present in the photoresist composition in an amount greater than 50 wt %, based on total weight of the photoresist composition.
2 more elements
Dependencies are inferred from the claim text.