Method of improved bright field-dark field metrology
AssigneeNanoverse Technologies Ltd
InventorsJeff Albelo, William Robertson, Garrett Budnik, Jared Richter
Life of this patent
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Abstract
A method for providing an improved white light source into a Bright Field-Dark Field three-dimensional metrology system for semiconductor wafers. It involves taking a laser light from a blue light laser and processing it through a consecutive series of optical elements to change the light to an encoded, structured white light with a shape that more closely resembles the geometric configuration of a BF-DF sensor having a linear design. The white light provided is much more efficient, has an increased photon density and a component of angled light in one axis, each which greatly enhances examination of surface defects on Si wafers/semiconductors.
Claims5
A method of generating more precise metrology surface examination data of semiconductors and semiconductor components, comprising the steps of:
- passing a collimated white light through a first optical element that provides a white light that is collimated in a first axis and focused in a second axis to provide an elliptically configured light;
- passing said elliptically configured light through a rotating modulator wheel to generate a structured, elliptically configured light;
- passing said structured, elliptically configured light through a second optical element to focus/relay it on an inspection region of a semiconductor or semiconductor component;
- gathering a dark field image data from a light that is refracted from said inspection region to a dark field line sensor camera's pixel array;
- and
- gathering a bright field image data from a light that is reflected from said inspection region to a bright field line sensor camera's pixel array.
The method of generating more precise metrology surface examination data of semiconductors and semiconductor components, wherein said elliptically configured light has a longest axis that approximates the length of said pixel arrays and is 20 mm +/−10 mm in length.
Dependencies are inferred from the claim text.