Semiconductor stitch structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYOU-CHENG LU, STEFAN RUSU, LAN-CHOU CHO, MING YANG JUNG
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Abstract
A semiconductor structure includes a plurality of semiconductor dies arranged to form a column-and-row array, and at least a stitch structure disposed in the semiconductor dies. The stitch structure includes a first portion and a second portion. The first portion is disposed on a first semiconductor die, and the second portion is disposed on a second semiconductor die. The first portion includes two grating coupler segments. The first semiconductor die and the second semiconductor die are adjacent to each other.
Claims20
A semiconductor structure comprising:
- a plurality of semiconductor dies arranged to form a column-and-row array;
- and
- at least a stitch structure disposed in the semiconductor dies, wherein the stitch structure comprises a first portion disposed on a first semiconductor die of the plurality of semiconductor dies and a second portion disposed on a second semiconductor die of the plurality of semiconductor dies, and the first portion comprises two grating coupler segments,
- wherein the first semiconductor die and the second semiconductor die are adjacent to each other.
A semiconductor structure comprising:
- a plurality of semiconductor dies arranged to form a column-and-row array;
- a first stitch structure disposed in the semiconductor dies, wherein the first stitch structure comprises a first portion disposed on a first semiconductor die of the plurality of semiconductor dies and a second portion disposed on a second semiconductor die of the plurality of semiconductor dies;
- and
- a second stitch structure disposed in the semiconductor dies, wherein the second stitch structure comprises a third portion disposed on the second semiconductor die of the plurality of semiconductor dies and a fourth portion disposed on a third semiconductor die of the plurality of semiconductor dies,
- wherein the first semiconductor die, the second semiconductor die and the third semiconductor die are periodically arranged.
A method for forming a semiconductor structure, comprising:
- receiving a first substrate comprising at least a first semiconductor die and a second semiconductor die adjacent to each other;
- forming a stitch pattern in the first semiconductor die and the second semiconductor die, wherein the stitch pattern comprises a first segment disposed in the first semiconductor die and a second segment disposed in the second semiconductor die;
- measuring a deviation between the first segment and the second segment of the stitch pattern;
- adjusting an exposure apparatus according to the measured deviation;
- and
- forming a semiconductor pattern in a second substrate using the exposure apparatus.
Dependencies are inferred from the claim text.