Semiconductor arrangement and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChan-Hong CHERN
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Abstract
A semiconductor arrangement is provided and includes a first dielectric layer over an optical device. A first metallization layer is over the first dielectric layer, and a first conductive line is in the first metallization layer. A first conductive via is in the first metallization layer and contacts the first conductive line. A second metallization layer is over the first metallization layer. A second conductive line is in the second metallization layer and contacts the first conductive via at a first interface. A heater is over the optical device and has a lowermost surface below the first interface and an uppermost surface above the first interface.
Claims4
A method, comprising:
- forming a first isolation structure in a semiconductor layer;
- forming a first doped region in the semiconductor layer;
- forming a second doped region in the semiconductor layer;
- forming a first dielectric layer over the first doped region, the second doped region, and a waveguide defined by a portion of the semiconductor layer at least partially surrounded by the first isolation structure;
- and
- forming a heater overlying the first dielectric layer and the waveguide.
Dependencies are inferred from the claim text.