On-chip temperature sensor
AssigneeSTMicroelectronics International N.V.
InventorsAnuj BHARDWAJ, Kedar Janardan DHORI, Anand Kumar MISHRA
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Abstract
According to the present disclosure, a temperature sensor operates based on a principle of leakage variation with temperature, which follows an exponential trend. With an increase in temperature, the frequency of the sensor increases due to an increase in leakage current. The frequency is converted to a digital, binary code based on output of a counter, which provides a measure of a temperature of a semiconductor substrate. Data output by the temperature sensor can be used to perform adaptive voltage scaling (AVS) or adaptive body bias (ABB).
Claims22
A temperature sensor, comprising:
- one or more sensing elements on a semiconductor substrate;
- and
- a controller on the semiconductor substrate and coupled to the one or more sensing elements,
- wherein the one or more sensing elements, in operation, output one or more output signals, respectively,
- wherein the controller, in operation, predicts a temperature of the semiconductor substrate based on the one or more output signals output by the one or more sensing elements,
- wherein the controller, in operation, outputs data based on the temperature of the semiconductor substrate,
- wherein each of the one or more sensing elements includes a plurality of sensing circuits electrically coupled in series, and
- wherein each of the one or more sensing circuits includes:
- an input terminal;
- an output terminal;
- a first transistor having a first terminal electrically coupled to a supply potential, a second terminal, and a third terminal electrically coupled to the input terminal;
- a second transistor having a first terminal electrically coupled to the second terminal of the first transistor, a second terminal, and a third terminal electrically coupled to a ground potential;
- a third transistor having a first terminal electrically coupled to the second terminal of the second transistor, a second terminal electrically coupled to the ground potential, and a third terminal coupled to the input terminal;
- a fourth transistor having a first terminal electrically coupled to the supply potential, a second terminal, and a third terminal electrically coupled to the second terminal of the first transistor and the first terminal of the second transistor;
- a fifth transistor having a first terminal electrically coupled to the second terminal of the fourth transistor, a second terminal, and a third terminal electrically coupled to the second terminal of the first transistor and the first terminal of the second transistor;
- a sixth transistor having a first terminal electrically coupled to the second terminal of the fifth transistor, a second terminal electrically coupled to the output terminal, and a third terminal electrically coupled to the second terminal of the first transistor and the first terminal of the second transistor;
- a seventh transistor having a first terminal electrically coupled to the second terminal of the sixth transistor and the output terminal, a second terminal electrically coupled to the ground potential, and a third terminal electrically coupled to the second terminal of the first transistor and the first terminal of the second transistor;
- an eighth transistor having a first terminal electrically coupled to the second terminal of the fourth transistor and the first terminal of the fifth transistor, a second terminal electrically coupled to the ground potential, and a third terminal electrically coupled to the second terminal of the sixth transistor, the first terminal of the seventh transistor, and the output terminal;
- and
- a nineth transistor having a first terminal electrically coupled to the second terminal of the fifth transistor and the first terminal of the sixth transistor, a second terminal electrically coupled to the ground potential, and a third terminal electrically coupled to the second terminal of the sixth transistor, the first terminal of the seventh transistor, and the output terminal.
A temperature sensor, comprising:
- one or more sensing elements on a semiconductor substrate;
- and
- a controller on the semiconductor substrate and coupled to the one or more sensing elements,
- wherein the one or more sensing elements, in operation, output one or more output signals, respectively,
- wherein the controller, in operation, predicts a temperature of the semiconductor substrate based on the one or more output signals output by the one or more sensing elements,
- wherein the controller, in operation, outputs data based on the temperature of the semiconductor substrate,
- wherein each of the one or more sensing elements includes a plurality of sensing circuits electrically coupled in series, and
- wherein each of the one or more sensing circuits includes:
- an input terminal;
- an output terminal;
- a first transistor having a first terminal electrically coupled to a supply potential, a second terminal, and a third terminal electrically coupled to the input terminal;
- a second transistor having a first terminal electrically coupled to the second terminal of the first transistor, a second terminal, and a third terminal electrically coupled to a ground potential;
- a third transistor having a first terminal electrically coupled to the second terminal of the second transistor, a second terminal electrically coupled to the ground potential, and a third terminal coupled to the input terminal;
- a fourth transistor having a first terminal electrically coupled to the supply potential, a second terminal, and a third terminal electrically coupled to the second terminal of the first transistor and the first terminal of the second transistor;
- a fifth transistor having a first terminal electrically coupled to the second terminal of the fourth transistor, a second terminal, and a third terminal electrically coupled to the second terminal of the first transistor and the first terminal of the second transistor;
- a sixth transistor having a first terminal electrically coupled to the second terminal of the fifth transistor, a second terminal electrically coupled to the ground potential, and a third terminal electrically coupled to the second terminal of the first transistor and the first terminal of the second transistor;
- and
- an seventh transistor having a first terminal electrically coupled to the second terminal of the fourth transistor and the first terminal of the fifth transistor, a second terminal electrically coupled to the ground potential, and a third terminal electrically coupled to the second terminal of the fifth transistor, the first terminal of the sixth transistor, and the output terminal.
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A method of operating a temperature sensor on a semiconductor substrate, comprising:
- receiving a first output signal from a sensing element of the temperature sensor;
- measuring a frequency of the first output signal;
- obtaining a plurality of coefficient values of a quadratic equation based on the frequency of the first output signal;
- and
- storing the coefficient values in a memory of a controller of the temperature sensor for process centering correction.
Dependencies are inferred from the claim text.