Polishing slurry, polishing system, and method for polishing semiconductor substrate
OwnerSheng-Han Chen, Ying-Chieh Chaoinventors
Life of this patent
Estimating the term…
Abstract
There are provided a polishing slurry, a polishing system, and a polishing method for a substrate including an aluminum nitride film to be polished. The polishing slurry contains negatively charged abrasive grains and an organic acid compound. The polishing system includes a polishing pad and a polishing slurry. The polishing method includes the steps of: bringing a substrate including an aluminum nitride film into contact with a polishing pad; preparing a polishing slurry; and polishing the substrate including an aluminum nitride film while simultaneously supplying the polishing slurry to the substrate including an aluminum nitride film.
Claims15
A polishing slurry for a substrate including an aluminum nitride film to be polished, the polishing slurry comprising:
- negatively charged abrasive grains;
- and
- an organic acid compound.
A polishing system for a substrate including an aluminum nitride film to be polished, the polishing system comprising:
- a polishing pad;
- and
- a polishing slurry,
- wherein the polishing slurry comprises:
- negatively charged abrasive grains;
- and
- an organic acid compound.
A method for polishing a semiconductor substrate, the method comprising the steps of:
- providing a substrate including an aluminum nitride film;
- bringing the substrate including an aluminum nitride film into contact with a polishing pad;
- producing a polishing slurry;
- and
- polishing the substrate including an aluminum nitride film using the polishing slurry,
- wherein the polishing slurry comprises:
- negatively charged abrasive grains;
- and
- an organic acid compound.
Dependencies are inferred from the claim text.