Semiconductor module arrangement

A semiconductor module arrangement, comprising:

• a first substrate comprising a dielectric insulation layer and a first metallization layer arranged on a surface of the dielectric insulation layer, wherein the first metallization layer comprises a first section, a second section, and a third section;
• two or more controllable semiconductor elements each comprising a first contact pad, a second contact pad, and a third contact pad;
• and
• one or more freewheeling elements each comprising a first contact pad and a second contact pad,
• wherein the second contact pad of the two or more controllable semiconductor elements and the second contact pad of the one or more freewheeling elements are electrically coupled to the first section,
• wherein the first contact pad of the two or more controllable semiconductor elements are electrically coupled to one another by means of a metal layer,
• wherein the metal layer continuously extends between the two or more controllable semiconductor elements,
• wherein the metal layer is electrically coupled to each first contact pad of the one or more freewheeling elements and to the second section by one or more electrical connection elements, and
• wherein the third contact pad of the two or more controllable semiconductor elements are electrically coupled to the third section by one or more electrical connection elements.