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US 2026/0293772 A1Published application
Package comprising a chiplet located between an integrated device and a metallization portion
AssigneeQUALCOMM Incorporated
InventorsYanmei SONG, William STONE, Jianwen XU, Senthil SIVASWAMY, John HOLMES, Ryan LANE
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Abstract
A package comprising a first metallization portion, a first integrated device coupled to the first metallization portion through a first plurality of pillar interconnects, and a first chiplet located between the first integrated device and the first metallization portion. The first chiplet is coupled to the first integrated device through a first plurality of inter pillar interconnects. The first chiplet may include an active chiplet. The first chiplet may include a passive chiplet.
Claims20
A package comprising:
- a first metallization portion;
- a first integrated device coupled to the first metallization portion through a first plurality of pillar interconnects;
- and
- a first chiplet located between the first integrated device and the first metallization portion,
- wherein the first chiplet comprises a trench capacitor device, wherein the trench capacitor device includes:
- a chiplet substrate;
- and
- a plurality of trench capacitors;
- wherein the first chiplet comprises a front side and a back side,
- wherein the front side of the first chiplet includes the plurality of trench capacitors, and
- wherein the front side of the first chiplet faces in a direction towards the first integrated device,
- wherein the first chiplet is coupled to the first integrated device through a first plurality of inter pillar interconnects, wherein the first plurality of inter pillar interconnects touch the first integrated device.
9 more elements
A package comprising:
- a first metallization portion;
- a first integrated device coupled to the first metallization portion through a first plurality of pillar interconnects;
- and
- a first chiplet located between the first integrated device and the first metallization portion,
- wherein the first chiplet includes a first trench capacitor device,
- wherein the first trench capacitor device includes a front side and a back side,
- wherein the front side of the first trench capacitor device faces in a direction towards the first integrated device, and
- wherein the first chiplet is coupled to the first integrated device through a first plurality of inter pillar interconnects, wherein the first plurality of inter pillar interconnects touch the first integrated device,
- a second integrated device coupled to the first metallization portion through a second plurality of pillar interconnects;
- a second chiplet located between the second integrated device and the first metallization portion, wherein the second chiplet is coupled to the second integrated device through a second plurality of inter pillar interconnects;
- and
- a bridge coupled to the first metallization portion, wherein the bridge is configured to provide at least one electrical path between the first integrated device and the second integrated device.
9 more elements
Dependencies are inferred from the claim text.