Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, the method comprising:

• preparing a first semiconductor substrate including a first substrate body, a first organic insulation layer provided on a surface of the first substrate body, and at least one first electrode provided on the surface of the first substrate body;
• preparing a second semiconductor substrate including a second substrate body, a second organic insulation layer provided on a surface of the second substrate body, and at least one second electrode provided on the surface of the second substrate body;
• heating at least one of the first semiconductor substrate and the second semiconductor substrate to cure at least one of the first organic insulation layer and the second organic insulation layer by the heating;
• and
• bonding the first organic insulation layer and the second organic insulation layer to each other and bonding the first electrode and the second electrode to each other, after the heating,
• wherein the first organic insulation layer and the second organic insulation layer contain a curable resin and a thermal crosslinking agent,
• wherein, after the heating, a curing rate of the first organic insulation layer to be subjected to the bonding is equal to or more than 30%, and after the heating, a curing rate of the second organic insulation layer to be subjected to the bonding is equal to or less than 85%.