Back to results
US 2026/0293746 A1Published application
Semiconductor device and manufacturing method of semiconductor device
AssigneesDenso Corporation, Toyota Jidosha Kabushiki Kaisha, MIRISE Technologies Corporation
InventorTomotaka ARIGA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an electrode. The electrode includes a copper electrode layer. The copper electrode layer contains an element that, when combined with hydrogen, forms a compound with a vapor pressure higher than atmospheric pressure. The element may be fluorine or chlorine. A concentration of the element in the copper electrode layer may be 1×1016 atoms/cm3 or more.
Claims7
A semiconductor device comprising:
- an electrode including a copper electrode layer, wherein
- the copper electrode layer contains an element that, when combined with hydrogen, forms a compound with a vapor pressure higher than atmospheric pressure.
A manufacturing method of a semiconductor device, comprising:
- forming an electrode including a copper electrode layer on a semiconductor substrate;
- and
- exposing the copper electrode layer to CF4 gas while the copper electrode layer is in an exposed state.
A manufacturing method of a semiconductor device, comprising:
- forming an electrode including a copper electrode layer on a semiconductor substrate;
- and
- exposing the copper electrode layer to BCl3 gas while the copper electrode layer is in an exposed state.
Dependencies are inferred from the claim text.