Semiconductor device and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorTaizo TOMIOKA
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AssigneeKabushiki Kaisha Toshiba
InventorTaizo TOMIOKA
Estimating the term…
According to one embodiment, a semiconductor device includes a semiconductor element including a first electrode and a semiconductor chip, and a base including a first conductive member including a first bonding region. The first electrode is located between the first bonding region and the semiconductor chip in a first direction extending from the first bonding region toward the semiconductor chip. The first bonding region includes a first region and a first other region. The first region is located between the first other region and the first electrode in the first direction. The first region is in contact with the first electrode. A first mean diameter of first metal crystal grains included in the first region is smaller than a first other mean diameter of first other metal crystal grains included in the first other region.
A semiconductor device comprising:
A method for manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.