Light sensor for package intrusion detection
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorKatherine H. Chiang
Life of this patent
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Abstract
Some embodiments relate to an integrated device including a first thin film transistor (TFT) arranged over a substrate; a second TFT arranged over the substrate; a metal barrier layer arranged over the second TFT, where the metal barrier layer is configured to block incident radiation from reaching the second TFT; a Fresnel lens arranged over the first TFT, where the Fresnel lens is configured to focus incident radiation towards the first TFT; and where the first TFT and the second TFT are configured to be coupled to a differential amplifier, the differential amplifier being operable to detect the incident radiation by comparison of a first leakage current from the first TFT to a second leakage current from the second TFT.
Claims20
An integrated device, comprising:
- a first thin film transistor (TFT) arranged over a substrate;
- a second TFT arranged over the substrate;
- a metal barrier layer arranged over the second TFT, wherein the metal barrier layer is configured to block incident radiation from reaching the second TFT;
- and
- a Fresnel lens arranged over the first TFT, wherein the Fresnel lens is configured to focus incident radiation towards the first TFT;
- and
- wherein the first TFT and the second TFT are configured to be coupled to a differential amplifier, the differential amplifier being operable to detect the incident radiation by comparison of a first leakage current from the first TFT to a second leakage current from the second TFT.
An integrated device, comprising:
- a first gate structure and a second gate structure arranged over a substrate;
- a channel layer disposed over the first gate structure and the second gate structure;
- a first pair of source/drain terminals arranged over the channel layer and along opposing sides of the first gate structure;
- a second pair of source/drain terminals arranged over the channel layer and along opposing sides of the second gate structure;
- a metal barrier layer arranged over the first pair of source/drain terminals;
- and
- a Fresnel lens arranged over the second pair of source/drain terminals.
An integrated device, comprising:
- a first gate structure and a second gate structure arranged over a substrate;
- a first dielectric layer covering the first gate structure and the second gate structure;
- a first channel spaced from the first gate structure by the first dielectric layer
- a second channel spaced from the second gate structure by the first dielectric layer;
- a capping layer extending over the first channel and the second channel;
- a metal barrier layer arranged over the first channel;
- and
- a Fresnel lens arranged over the second channel.
Dependencies are inferred from the claim text.