Etching-damage-free intermetal dielectric layer with thermal dissipation feature

A semiconductor device comprising:

• a substrate;
• a dielectric layer disposed over the substrate and including a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from 30 atomic % to 45 atomic %;
• an interconnect structure extending through the dielectric layer;
• and
• a thermal dissipation structure including a thermal dissipation feature which extends through the dielectric layer and which is disposed to be spaced apart from the interconnect structure, the thermal dissipation feature including a thermal conductive dielectric material having a thermal conductivity ranging from 1 W/mK to 2 W/mK.

A semiconductor device comprising:

• a substrate;
• a first etch stop layer disposed over the substrate;
• a dielectric layer disposed on the first etch stop layer and including a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from 30 atomic % to atomic %;
• an interconnect structure extending through the dielectric layer;
• and
• a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure, an interface between the thermal dissipation feature and the first etch stop layer being flush with an interface between the dielectric layer and the first etch stop layer.