Contact window, memory unit, and memory device and fabrication method thereof
AssigneesSemiconductor Manufacturing Beijing Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorZhenchao SUI
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Abstract
A contact window, a memory unit, a memory device, and a fabrication method of the memory device are provided in the present disclosure. The contact window includes a conductive blocking layer, where the conductive barrier-layer encloses a hollow shell, an end of the hollow shell is a sealed structure configured with a bottom surface, the bottom surface of the sealed structure is electrically connected to a first device to-be-connected, another end of the hollow shell is an open structure not configured a bottom surface, and an end surface of the open structure is electrically connected to a second device to-be-connected; and further includes a filling metal. The filling metal fills a portion of the hollow shell enclosed by the conductive blocking layer.
Claims20
A contact window, comprising:
- a conductive blocking layer, wherein the conductive barrier-layer encloses a hollow shell;
- an end of the hollow shell is a sealed structure configured with a bottom surface;
- the bottom surface of the sealed structure is electrically connected to a first device to-be-connected;
- another end of the hollow shell is an open structure not configured a bottom surface;
- and an end surface of the open structure is electrically connected to a second device to-be-connected;
- and
- a filling metal, wherein the filling metal fills a portion of the hollow shell enclosed by the conductive blocking layer.
A memory unit, comprising:
- a switching device;
- a first contact window, wherein the first contact window includes:
- a conductive blocking layer, wherein the conductive barrier-layer encloses a hollow shell;
- an end of the hollow shell is a sealed structure configured with a bottom surface;
- the bottom surface of the sealed structure is electrically connected to a first device to-be-connected;
- another end of the hollow shell is an open structure not configured a bottom surface;
- and an end surface of the open structure is electrically connected to a second device to-be-connected;
- and
- a filling metal, wherein the filling metal fills a portion of the hollow shell enclosed by the conductive blocking layer;
- and one end of the first contact window is electrically connected to one end of the switching device;
- and
- a memory element, wherein the memory element is on a side of the first contact window away from the switching device and electrically connected to another end of the first contact window.
A fabrication method of a memory device, comprising:
- forming a switching device;
- forming a first contact window, wherein the first contact window includes:
- a conductive blocking layer, wherein the conductive barrier-layer encloses a hollow shell;
- an end of the hollow shell is a sealed structure configured with a bottom surface;
- the bottom surface of the sealed structure is electrically connected to a first device to-be-connected;
- another end of the hollow shell is an open structure not configured a bottom surface;
- and an end surface of the open structure is electrically connected to a second device to-be-connected;
- and
- a filling metal, wherein the filling metal fills a portion of the hollow shell enclosed by the conductive blocking layer;
- and one end of the first contact window is electrically connected to one end of the switching device;
- and
- forming a memory element, wherein the memory element is on a side of the first contact window away from the switching device and electrically connected to another end of the first contact window.
Dependencies are inferred from the claim text.