Novel interconnect structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Chih YU, Chien-Mao CHEN
Life of this patent
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Abstract
A method includes: forming a first conductive structure in a first dielectric layer; forming a conductive protection structure that is coupled to at least part of the first conductive structure; forming a second dielectric layer over the first dielectric layer; forming a via hole extending through at least part of the second dielectric layer to expose a portion of the conductive protection structure; cleaning the via hole; and refilling the via hole with a conductive material to form a via structure.
Claims20
A method of forming a semiconductor device, comprising:
- forming a first metallization structure in a first dielectric layer;
- forming a conductive protection layer over the first dielectric layer and the first metallization structure;
- forming a conductive protection structure aligned with the first metallization structure;
- forming a second dielectric layer over the conductive protection structure;
- and
- forming a via structure, in a via hole in the second dielectric layer, electrically coupled to the conductive protection structure.
A method of forming a semiconductor device, comprising:
- forming a first metallization structure in a first dielectric layer;
- forming a conductive protection structure over the first metallization structure;
- forming a dielectric layer over the conductive protection structure;
- forming a via hole through the dielectric layer to expose a portion of the conductive protection structure;
- forming a via structure in the via hole that electrically couples to the conductive protection structure;
- and
- forming a second metallization structure over the via structure,
- wherein the conductive protection structure has a width smaller than a width of the first metallization structure and greater than a width of the via structure.
A method of forming a semiconductor device, comprising:
- forming a first metallization structure, comprising copper, in a first dielectric layer;
- forming a conductive protection structure, comprising tungsten, over at least part of the first metallization structure;
- forming a second dielectric layer over the conductive protection structure and the first dielectric layer;
- and
- forming a via structure, in a via hole extending through at least part of the second dielectric layer to expose a portion of the conductive protection structure, that electrically couples to the conductive protection structure.
Dependencies are inferred from the claim text.