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US 2026/0293629 A1Published application
Bonded semiconductor structure and method for forming the same
AssigneeUnited Microelectronics Corp.
InventorsChun-Hung Chen, Chuan-Lan Lin, Chu-Fu Lin, Teng-Chuan Hu, Min-Shiang Hsu
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Abstract
A bonded semiconductor structure includes a first wafer having a first through silicon via (TSV), a second wafer bonded to the first wafer, and a second TSV through the second wafer. The second TSV has a lower portion contacting and electrically connected to the first TSV and an upper portion on the lower portion. A sidewall of the lower portion, a bottom surface and a sidewall of the upper portion form a step-profile.
Claims20
A bonded semiconductor structure, comprising:
- a first wafer comprising a first through silicon via (TSV);
- a second wafer bonded to the first wafer;
- and
- a second TSV through the second wafer and comprising:
- a lower portion contacting the first TSV;
- and
- an upper portion on the lower portion, wherein a sidewall of the lower portion, a bottom surface and a sidewall of the upper portion form a step-profile.
4 more elements
A method for forming a bonded semiconductor structure, comprising:
- providing a first wafer comprising a first through silicon via (TSV);
- bonding a second wafer on the first wafer;
- performing a first etching process to form a via hole stop on an etching stop layer in the second wafer;
- performing a second etching process to extend the via hole through the etching stop layer and the second wafer to expose a top surface and a sidewall of a conductive structure in the second wafer and a top surface of the first TSV;
- and
- forming a second TSV in the via hole.
3 more elements
Dependencies are inferred from the claim text.