Method for manufacturing semiconductor device

Abstract

A method for manufacturing a semiconductor device according to an embodiment has a mark forming step, a first adhering step, a grinding step, and a processing step. The mark forming step is a step of forming recessed portions on a device surface on which a circuit pattern of a base material made of a semiconductor material is formed. The first adhering step is a step of adhering the device surface to a support substrate. The grinding step is a step of forming a grinding surface by grinding a surface of the base material on a side opposite to the device surface in a state of being supported by the support substrate. The processing step is a step of performing processing on the base material from the grinding surface side in a state of being supported by the support substrate. In the method for manufacturing the semiconductor device according to the embodiment, in the grinding step, the recessed portions are exposed on the grinding surface to serve as marks, and in the processing step, the processing is performed based on the marks.

Dependencies are inferred from the claim text.