Near-infrared perovskite light-emitting diodes
AssigneePurdue Research Foundation
InventorsLetian DOU, Wenhao SHAO, Sungdoo BAEK
Life of this patent
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Abstract
Near-infrared (NIR) perovskite light-emitting diodes (PeLEDs) and methods of formation are described. To form the PELEDs, perovskite precursors are dissolved using a mixture of N,N-dimethylformamide (DMF) and N-methylpyrrolidone (NMP) to form perovskite crystals. The perovskite crystals are modified using a small-bandgap organic cation of 2-(5-(7-(3-ethylthiophen-2-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazol-4-yl)thiophen-2-yl)ethan-1-aminium iodide (TeFBTT) to form a two- or three-dimensional (2D/3D) perovskite heterostructure in a (TeFBTT)2PbI4 thin film. The (TeFBTT)2PbI4 thin film is then used to form the NIR PeLED.
Claims20
A method of forming a near-infrared (NIR) perovskite light-emitting diode (PeLED), the method comprising:
- dissolving perovskite precursors using a mixture of Lewis base solvents to form perovskite crystals, the mixture of Lewis base solvents comprising N,N-dimethylformamide (DMF) and at least one other Lewis base solvent selected from a group that includes N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), tris(N,N-tetramethylene) phosphoric acid triamide (TPPO), hexamethyl phosphoryl triamide (HMPA), diethyl sulfoxide (DES), N,N-dimethylpropyleneurea (DMPU), 1,3-dimethyl-2-imidazolidinone (DMI), N,N-dimethylacetamide (DMA), tetramethylene sulfoxide (TMSO), and 2-pyrrolidinone (PDI);
- modifying the perovskite crystals using a small-bandgap organic cation of 2-(5-(7-(3-ethylthiophen-2-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazol-4-yl)thiophen-2-yl)ethan-1-aminium iodide (TeFBTT) to form a two- or three-dimensional (2D/3D) perovskite heterostructure in a (TeFBTT)2PbI4 thin film;
- and
- using the (TeFBTT)2PbI4 thin film to form the NIR PeLED.
A near-infrared (NIR) perovskite light emitting diode (PeLED) comprising:
- a zinc oxide (ZnO)/polyethylenimine ethoxylated (PEIE) layer disposed on an indium-tin-oxide (ITO)-coated transparent substrate;
- a 2-(5-(7-(3-ethylthiophen-2-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazol-4-yl)thiophen-2-yl)ethan-1-aminium iodide (TeFBTT)PbI4 thin film disposed on the ZnO/PEIE layer;
- a poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)-diphenylamine) (TFB) layer disposed on the (TeFBTT)2PbI4 thin film;
- a molybdenum oxide (MoOx) layer disposed on the TFB layer;
- and
- a gold (Au) layer disposed on the MoOx layer to form a top electrode.
A method of forming a near-infrared (NIR) perovskite light emitting diode (PeLED), the method comprising:
- dissolving perovskite precursors using a mixture of Lewis base solvents to form perovskite crystals, the mixture of Lewis base solvents comprising N,N-dimethylformamide (DMF) and at least one other Lewis base solvent selected from a group that includes N-methylpyrrolidone (NMP), dimethyl sulfoxide (DMSO), tris(N,N-tetramethylene) phosphoric acid triamide (TPPO), hexamethyl phosphoryl triamide (HMPA), diethyl sulfoxide (DES), N,N-dimethylpropyleneurea (DMPU), 1,3-dimethyl-2-imidazolidinone (DMI), N,N-dimethylacetamide (DMA), tetramethylene sulfoxide (TMSO), and 2-pyrrolidinone (PDI) at a ratio that is dependent on the at least one other Lewis base solvent;
- modifying the perovskite crystals using a small-bandgap organic cation of 2-(5-(7-(3-ethylthiophen-2-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazol-4-yl)thiophen-2-yl)ethan-1-aminium iodide (TeFBTT) to form a two- or three dimensional (2D/3D) perovskite heterostructure in a (TeFBTT)2PbI4 thin film;
- and
- fabricating the PeLED using the (TeFBTT)2PbI4 thin film;
- wherein the PeLED has a peak radiance and a peak external quantum efficiency (EQE) of at least about 500 W sr−1 cm−2 and at least about 26.5%, respectively.
Dependencies are inferred from the claim text.