# US 2026/0293377 A1 · Semiconductor light-emitting element, and display device

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- Number: US 2026/0293377 A1
- Document ID: US20260293377A1
- Status: Published application
- Kind: A1
- Application number: 19/133,574
- Filed: 2022-11-28
- Published: 2026-09-24
- Earliest claimed: 2022-11-28
- Assignees: LG Electronics Inc.
- Applicants: LG Electronics Inc.
- Inventors: Jinhyuk JUNG; Byoungkwon CHO; Youngsung YANG; Wonseok CHOI
- Web page: https://patentgrep.com/patent/US20260293377A1

## CPC

- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10H 20/017: {Etching}
- H10H 20/032: {of electrodes}
- H10H 20/831: characterised by their shape
- H10H 20/832: characterised by their material
- H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30)
- H10H 29/49: Interconnections, e.g. wiring lines or terminals (connection of the pixel electrodes to the driving transistors H10H29/39)
- H10W 90/00: Package configurations
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor light-emitting element may include a light-emitting layer, a passivation layer surrounding the light-emitting layer, a first electrode comprising a first non-uniform region under the light-emitting layer, and a second non-uniform region under the first non-uniform region, and a second electrode on the light-emitting layer. The first non-uniform region may include a plurality of first negative patterns and a plurality of first protrusions in the plurality of first negative patterns. The second non-uniform region may include a plurality of second negative patterns and a plurality of second protrusions in the plurality of second negative patterns. The plurality of second negative patterns may have shapes corresponding to shapes of the plurality of first negative patterns, respectively. The plurality of second protrusions may have shapes corresponding to shapes of the plurality of first protrusions.

## Claims

### Claim 1

A semiconductor light-emitting element, comprising:
a light-emitting layer comprising a first emission region, a second emission region, and a third emission region between the first emission region and the second emission region;
a passivation layer surrounding the light-emitting layer;
a first-first non-uniform region under the first emission region of the light-emitting layer;
a first-second non-uniform region under the second emission region of the light-emitting layer;
a first uniform region under the third emission of the light-emitting layer;
a first electrode comprising a second-first non-uniform region, a second-second non-uniform region, and a second uniform region under the first-first non-uniform region, the first-second non-uniform region, and the first uniform region, respectively; and
a second electrode on the light-emitting layer,
wherein each of the first-first non-uniform region and the first-second non-uniform region comprises a plurality of first negative patterns and a plurality of first protrusions on the plurality of first negative patterns,
wherein each of the second-first non-uniform region and the second-second non-uniform region comprises a plurality of second negative patterns and a plurality of second protrusions on the plurality of second negative patterns,
wherein the plurality of second negative patterns have shapes corresponding to shapes of the plurality of first negative patterns, respectively, and
wherein the plurality of second protrusions have shapes corresponding to shapes of the plurality of first protrusions, respectively.

### Claim 2 (depends on 1)

The semiconductor light-emitting element of claim 1, wherein the first protrusion has a first peak, and
wherein the second protrusion has a second peak having a shape corresponding to a shape of the first peak.

### Claim 3 (depends on 1)

The semiconductor light-emitting element of claim 1, wherein the first negative pattern and the second negative pattern have ring shapes around the first protrusion and the second protrusion, respectively.

### Claim 4 (depends on 1)

The semiconductor light-emitting element of claim 1, wherein a maximum diameter of the first protrusion or a maximum width of the first negative pattern is 100 nm or less.

### Claim 5 (depends on 1)

The semiconductor light-emitting element of claim 1, wherein the light-emitting layer comprises:
a first conductivity type semiconductor layer;
an active layer on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer on the active layer,
wherein the first conductivity type semiconductor layer has a thickness of 70% or more of a total thickness of the light-emitting layer.

### Claim 6 (depends on 5)

The semiconductor light-emitting element of claim 5, wherein a height of the first protrusion is 20% to 70% of a thickness of the first conductivity type semiconductor layer.

### Claim 7 (depends on 6)

The semiconductor light-emitting element of claim 6, wherein a thickness of the first electrode of 30% or less of the height of the first protrusion.

### Claim 8 (depends on 7)

The semiconductor light-emitting element of claim 7, wherein the first electrode comprises a plurality of metal layers comprising at least an ohmic contact layer and a magnetic layer, and wherein each of the plurality of metal layers has a thickness of 50 nm or less.

### Claim at position 9

-11. (canceled)

### Claim 12 (depends on 5)

The semiconductor light-emitting element of claim 5, wherein the first uniform region, the first-first non-uniform region, and the first-second non-uniform region are parts of the first conductivity type semiconductor layer.

### Claim 13 (depends on 5)

The semiconductor light-emitting element of claim 5, wherein the first uniform region has a first recess formed on a lower surface of the first conductivity type semiconductor layer, and the second uniform region has a second recess corresponding to the first recess.

### Claim 14 (depends on 13)

The semiconductor light-emitting element of claim 13, wherein a surface of the first uniform region is positioned on a same horizontal line as the bottom of the first negative pattern.

### Claim 15 (depends on 15)

A display device, comprising:
a backplane substrate;
the semiconductor light-emitting element of claim 15 on the backplane substrate;
a fixing member between the backplane substrate and the semiconductor light-emitting element;
a connecting electrode on a lateral part of the semiconductor light-emitting element; and
an electrode wiring on an upper side of the semiconductor light-emitting element,
wherein the connecting electrode is connected to at least one of a first assembly wiring or a second assembly wiring of the backplane substrate.

### Claim 16 (depends on 15)

The display device of claim 15, wherein the fixing member is disposed in a second recess.

### Claim 17 (depends on 15)

The display device of claim 15, wherein the fixing member is disposed in the plurality of second negative patterns of the first electrode.