Integrated circuit device and method of manufacturing the same

A method, comprising:

• forming one or more first dielectric layers, and one or more first conductive structures disposed in the one or more first dielectric layers, on a first side of a first substrate to form a first portion of a first IC die having a first side opposite the first substrate;
• inverting the first portion of the first IC die;
• forming, on a second side of the first substrate, a second dielectric layer;
• performing a high-density-plasma (HDP) chemical vapor deposition (CVD) operation to form a third dielectric layer on the second dielectric layer, the HDP CVD operation employing a combination of silane (SiO4) gas and oxygen (O2) gas at a temperature of approximately 300 degrees Celsius;
• forming at least one fourth dielectric layer on the third dielectric layer, the at least one fourth dielectric layer comprising a second side of the first IC die;
• forming a second conductive structure in each of the at least one fourth dielectric layer, the third dielectric layer, the second dielectric layer, the first substrate, and at least one of the one or more first dielectric layers, the second conductive structure extending from the second side of the first IC die to at least one of the one or more first conductive structures;
• inverting the first IC die;
• forming, on a first side of a second substrate of a second IC die, one or more third conductive structures disposed in one or more fifth dielectric layers on the second substrate, at least one of the one or more third conductive structures extending to a first side of the second IC die opposite the second substrate;
• bonding the second side of the first IC die to the first side of the second IC die to electrically couple the one or more third conductive structures to the second conductive structure;
• forming, on a first side of a third substrate of a third IC die, one or more fourth conductive structures disposed in one or more sixth dielectric layers on the third substrate, at least one of the one or more fourth conductive structures extending to a first side of the third IC die opposite the third substrate;
• inverting the third IC die;
• and
• bonding the first side of the third IC die to the first side of the first IC die to electrically couple at least one of the one or more fourth conductive structures to at least one of the one or more first conductive structures.

An integrated circuit (IC) device, comprising:

• a first IC die comprising:
• a first substrate;
• one or more first dielectric layers disposed on an upper side of the first substrate;
• one or more first conductive structures disposed in the one or more first dielectric layers;
• a second dielectric layer disposed on a lower side of the first substrate;
• a third dielectric layer disposed on a lower side of the second dielectric layer, the third dielectric layer having a nitrogen concentration that is less than five percent of a nitrogen concentration of at least one of the one or more first dielectric layers;
• at least one fourth dielectric layer disposed on a lower side of the third dielectric layer, the at least one fourth dielectric layer comprising a lower side of the first IC die;
• and
• a second conductive structure extending from the lower side of the first IC die upward through the first substrate to at least one of the one or more first conductive structures;
• and
• a second IC die comprising:
• a second substrate;
• one or more fifth dielectric layers disposed on an upper side of the second substrate;
• and
• one or more third conductive structures disposed in the one or more fifth dielectric layers, wherein at least one of the one or more third conductive structures is electrically coupled to the second conductive structure at an upper side of the second IC die.