Lateral electrical path from contact to contact
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKeJing Yu, Ru-Shang Hsiao, Nai-Chyi Chang, Sheng Yu Lin
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Abstract
Semiconductor structures and methods of fabrication are provided. A method includes forming a trench over a semiconductor substrate, wherein the trench has a trench sidewall; forming a semiconductor liner on the trench sidewall; converting at least a portion of the semiconductor liner to a metal-semiconductor intermetallic; forming a first conductive contact in the trench, wherein the first conductive contact contacts the metal-semiconductor intermetallic; and forming a second conductive contact adjacent to the metal-semiconductor intermetallic.
Claims20
A method comprising:
- forming a trench over a semiconductor substrate, wherein the trench has a trench sidewall;
- forming a semiconductor liner on the trench sidewall;
- converting at least a portion of the semiconductor liner to a metal-semiconductor intermetallic;
- forming a first conductive contact in the trench, wherein the first conductive contact contacts the metal-semiconductor intermetallic;
- and
- forming a second conductive contact adjacent to the metal-semiconductor intermetallic.
A method comprising:
- defining a first device region and a second device region of a semiconductor substrate;
- performing a feature formation process to form a first feature on and/or over the substrate in the first device region and a second feature on and/or over the substrate in the second device region;
- performing an etch process to form a first sidewall over the first feature and to form a second sidewall over the second feature;
- performing a deposition process to form a first semiconductor liner on the first sidewall and a second semiconductor liner on the second sidewall;
- and
- performing a conversion process to convert upper portions of the first feature and the second feature to a metal-semiconductor intermetallic and to selectively convert at least a portion of the first semiconductor liner to a metal-semiconductor intermetallic, wherein the second semiconductor liner is not converted to the metal-semiconductor intermetallic.
A semiconductor structure having an upper surface and comprising:
- a first conductive contact extending downward from the upper surface of the structure;
- a second conductive contact extending downward from the upper surface of the structure;
- and
- a metal-semiconductor intermetallic located between and contacting the first conductive contact and the second conductive contact.
Dependencies are inferred from the claim text.