Semiconductor device and method for manufacturing the same

Abstract

The present disclosure relates to a semiconductor device capable of achieving both suppression of a short channel effect and an increase in driving capability, and a method for manufacturing the semiconductor device. The semiconductor device includes: a field effect transistor having a source region and a drain region formed in a semiconductor substrate; and a gate electrode including a planar electrode portion formed in a plane higher than the semiconductor substrate, and two dug-in electrode portions that are dug in the semiconductor substrate. The shape of a channel portion between the two dug-in electrode portions of the field effect transistor is formed asymmetrically in the direction of the source region and the drain region. The present disclosure can be applied to an amplification transistor or the like of each pixel of a solid-state imaging device, for example.

Dependencies are inferred from the claim text.