Method for manufacturing semiconductor device and semiconductor device

Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes preparing a structure body. The structure body includes a semiconductor layer, a first metal layer located on a part of the semiconductor layer, and a second metal layer located around the first metal layer along a first plane on another part of the semiconductor layer. The second metal layer includes aluminum. The method includes forming a first layer at a side surface of the second metal layer facing the first metal layer. The first layer does not substantially include aluminum. The method includes processing an upper surface of the semiconductor layer by wet etching. The method includes forming a semi-insulating layer in contact with the upper surface of the semiconductor layer. The semi-insulating layer is electrically connected with the first and second metal layers.

Dependencies are inferred from the claim text.