Manufacturing method for transistor device

Abstract

Disclosed in the present disclosure is a manufacturing method for a transistor device. The method comprises: providing a substrate; sequentially forming on one side of the substrate a first electrode layer, a first insulating layer and a second electrode layer; forming a via hole that penetrates the first electrode layer and the first insulating layer, wherein the bottom of the via hole extends to the second electrode layer; and sequentially forming on a side face of the via hole a semiconductor layer, a gate insulating layer and a gate electrode. One or more embodiments of the present invention help to manufacture a transistor device having good grid-control capability, and the manufactured device can better realize scaling, which is beneficial to a large-scale array.

Dependencies are inferred from the claim text.