US 2026/0293203 A1Published application

Semiconductor device and semiconductor storage device

OwnerKohei KAWAGUCHI, Kenichi HAGA +6inventors

InventorsKohei KAWAGUCHI, Kenichi HAGA, Takamasa HAMAI, Tatsuki KIKUCHI, Akinori KAMIYAMA, Satoshi HASEGAWA, Keiji IKEDA, Yuya MATSUZAWA

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Abstract

According to one embodiment, a semiconductor device includes an oxide semiconductor layer extending in an up-down direction. The oxide semiconductor layer has an annular upper surface with a recessed interior surface below the annular upper surface. The recessed interior surface is surrounded by an inner edge of the annular upper surface. A bottom surface of the oxide semiconductor layer is at an opposite end in the up-down direction. An outer peripheral surface extends from the upper surface to the bottom surface of the oxide semiconductor layer. An insulating film surrounds the side surface from the upper to bottom surface. A first electrode contacts the bottom surface. A gate electrode faces the oxide semiconductor layer with the insulating film interposed therebetween. A second electrode contacts the annular upper surface and the recessed interior surface of the oxide semiconductor layer.

Claims20

Dependent claims

A semiconductor device, comprising:

an oxide semiconductor layer extending in an up-down direction, the oxide semiconductor layer having:
an annular upper surface with a recessed interior surface below the annular upper surface, the recessed interior surface being surrounded by an inner edge of the annular upper surface,
a bottom surface at an opposite end of the annular upper surface in the up-down direction, and
an outer peripheral side surface extending from the annular upper surface to the bottom surface;
an insulating film surrounding the outer peripheral side surface of the oxide semiconductor layer from the annular upper surface to bottom surface;
a first electrode in contact with the bottom surface of the oxide semiconductor layer;
a gate electrode facing a part of the outer peripheral side surface with the insulating film interposed therebetween, the part being spaced from the annular upper surface and the bottom surface of the oxide semiconductor layer;
and
a second electrode in contact with the annular upper surface and the recessed interior surface of the oxide semiconductor layer.

6 more elements

Dependencies are inferred from the claim text.