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US 2026/0293187 A1Published application
Backside contact with bottom inner spacer
AssigneeInternational Business Machines Corporation
InventorsSarbajit Singh, Ruilong Xie, Ravikumar Ramachandran, Mahender Kumar, Kisik Choi, Nicolas Jean Loubet, Reinaldo Vega, Xiaoming Yang
Life of this patent
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Abstract
A nanosheet semiconductor structure including a backside contact structure beneath a first source drain region, and a bottom inner spacer directly beneath a second source drain region adjacent to the backside contact structure.
Claims20
A nanosheet semiconductor structure comprising:
- a backside contact structure beneath a first source drain region;
- and
- a bottom inner spacer directly beneath a second source drain region adjacent to the backside contact structure.
A nanosheet semiconductor structure comprising:
- a backside contact structure beneath a first source drain region;
- and
- a bottom inner spacer directly beneath a second source drain region adjacent to the backside contact structure, wherein the backside contact structure is taller than the bottom inner spacer.
A nanosheet semiconductor structure comprising:
- a backside contact structure beneath a first source drain region;
- and
- a bottom inner spacer directly beneath a second source drain region adjacent to the backside contact structure, wherein a height of the backside contact structure is substantially equal to a height of the bottom inner spacer.
Dependencies are inferred from the claim text.