Semiconductor device structure and method for forming the same

A method for forming a semiconductor device structure, comprising:

• forming a first electrode over a semiconductor substrate;
• forming an insulator over the first electrode;
• forming a second electrode over the insulator;
• forming a dielectric structure covering the first electrode, the insulator, and the second electrode;
• and
• forming a stress-resistant layer contacting the dielectric structure, wherein a Young's modulus of the stress-resistant layer is greater than a Young's modulus of the first electrode and a Young's modulus of the second electrode.

A semiconductor device structure, comprising:

• a first conductive layer and a second conductive layer;
• a dielectric layer between the first conductive layer and the second conductive layer;
• a dielectric structure encapsulating the first conductive layer, the dielectric layer, and the second conductive layer;
• and
• a reinforcing layer between the first conductive layer and a portion of the dielectric structure and contacting the dielectric structure.