Method of manufacturing semiconductor device
AssigneeKioxia Corporation
InventorHiroshi ITOKAWA
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes the steps of: stacking a first layer mainly composed of silicon and including germanium and oxygen on a first wafer; forming a first element and a first bonding electrode in the first wafer; forming a second element and a second bonding electrode in a second wafer; bonding the first wafer and the second wafer via the first bonding electrode and the second bonding electrode; and transmitting a laser light through a first substrate to irradiate the first layer with the laser light, and thereby induce cleavage in the first layer.
Claims20
A method of manufacturing a semiconductor device, including the steps of:
- stacking a first layer mainly composed of silicon and including germanium and oxygen on a first wafer having a first substrate;
- forming a first element and a first bonding electrode in the first wafer;
- forming a second element and a second bonding electrode in a second wafer;
- bonding the first wafer and the second wafer via the first bonding electrode and the second bonding electrode;
- and
- transmitting a laser light through the first substrate to irradiate the first layer with the laser light, and thereby induce cleavage in the first layer.
Dependencies are inferred from the claim text.