Electronic device and method of manufacturing the same
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsPo-Ming LEE, Erh-Ju LIN, Lu-Ming LAI
Life of this patent
Estimating the term…
Abstract
An electronic device and method of manufacturing the same are provided. The electronic device includes a carrier, a first conductive layer, and a cover. The carrier has a first upper surface and a second upper surface at an elevation higher than that of the first upper surface. The first conductive layer is disposed over the second upper surface. The cover is disposed over the first conductive layer. The carrier, the first conductive layer, and the cover define a hermetic space. The first conductive layer includes a non-nanotwin copper layer and has an average grain size equal to or less than about 150 nm.
Claims20
An electronic device, comprising:
- a carrier having a first upper surface and a second upper surface at an elevation higher than that of the first upper surface;
- a first conductive layer disposed over the second upper surface;
- and
- a cover disposed over the first conductive layer, wherein the carrier, the first conductive layer, and the cover define a hermetic space, and the first conductive layer comprises a non-nanotwin copper layer and has an average grain size equal to or less than about 150 nm.
An electronic device, comprising:
- a first carrier;
- a first conductive layer disposed on the first carrier;
- a second carrier;
- and
- a second conductive layer on the second carrier and bonded to the first conductive layer,
- wherein each of the first conductive layer and the second conductive layer comprises a non-nanotwin copper layer and has an average grain size equal to or less than about 150 nm.
A method of manufacturing an electronic device, comprising:
- providing a first carrier;
- forming a first ultra-fine grain copper (UFG-Cu) layer over the first carrier, wherein an average grain size of the first UFG-Cu layer is equal to or less than about 150 nm;
- providing a second carrier;
- forming a conductive layer over the second carrier;
- and
- bonding the conductive layer and the first UFG-Cu layer.
Dependencies are inferred from the claim text.