Photoelectric conversion device
AssigneeCanon Kabushiki Kaisha
InventorTOMOYA SASAGO
Life of this patent
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Abstract
A photoelectric conversion device includes a first pixel including a first avalanche photodiode and a charge circuit configured to apply a first reverse bias voltage equal to or higher than a breakdown voltage to the first avalanche photodiode, wherein the first pixel is configured to output a signal by avalanche multiplication of the first avalanche photodiode; and a second pixel including a second avalanche photodiode and a voltage control circuit configured to apply a second reverse bias voltage lower than the breakdown voltage to the second avalanche photodiode, wherein the second pixel is configured not to output a signal by avalanche multiplication of the second avalanche photodiode.
Claims20
A photoelectric conversion device comprising:
- a first pixel including a first avalanche photodiode and a charge circuit configured to apply a first reverse bias voltage equal to or higher than a breakdown voltage to the first avalanche photodiode, wherein the first pixel is configured to output a signal by avalanche multiplication of the first avalanche photodiode;
- and
- a second pixel including a second avalanche photodiode and a voltage control circuit configured to apply a second reverse bias voltage lower than the breakdown voltage to the second avalanche photodiode, wherein the second pixel is configured not to output a signal by avalanche multiplication of the second avalanche photodiode,
- wherein the voltage control circuit is configured to control the second reverse bias voltage applied to a cathode of the second avalanche photodiode based on a voltage of the cathode.
Dependencies are inferred from the claim text.