Active gate control device
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsYusei KIOKA, Shoji OOTAKA, Yoshiharu NITO, Reiji TAGOMORI, Satoru OSHITA
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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsYusei KIOKA, Shoji OOTAKA, Yoshiharu NITO, Reiji TAGOMORI, Satoru OSHITA
Estimating the term…
An active gate control device according to an embodiment includes: a gate terminal drive unit that controls a gate voltage of the gate terminal of the semiconductor switching device by controlling a drive current supplied to the gate terminal of the semiconductor switching device in order to operate the semiconductor switching device; a DESAT circuit unit that monitors a detection voltage based on a voltage between the drain and source of the semiconductor switching device, and outputs a detection signal based on the detection voltage; a drive waveform generation unit that generates a gate drive waveform corresponding to a brake of active gate control based on the detection signal, and outputs an active gate control signal to the gate terminal drive unit; and a control unit that controls the operation of the semiconductor switching device by the gate terminal drive unit using a gate control signal.
An active gate control device that performs active gate control at a timing of turning on or off a semiconductor switching device, comprising:
An active gate control device that performs active gate control at the timing of turning off a semiconductor switching device, comprising:
An active gate control device that performs active gate control at the timing of turning on or off a semiconductor switching device, the active gate control device comprising:
Dependencies are inferred from the claim text.